Task id12032

In a long bar, shaped like a scalene parallelepiped (a>b>>c) and made of semiconductor material InSb, current I flows in the direction of edge a. The block is in a magnetic field, the direction of the induction vector B coincides with the edge c. Current carriers in InSb are electrons that move in an electric field of strength E with an average speed v=uE (the coefficient is called electron mobility). In the presence of a magnetic field, it is necessary to take into account the effect of the Lorentz force on electrons - the direction of the intensity vector in this case will not be parallel to the electric current. This phenomenon is known as the "Hall effect". Complete the following tasks; 1. Determine the magnitude and direction of the electric field strength vector in the block. 2. Calculate the potential difference between opposite points on the surface of the block in the direction of edge b. 3. Obtain an analytical expression for the constant component of the potential difference found in step 2, if the current strength and magnetic field induction change according to the laws: I=I0 sin wt, B=B0 sin (wt+ph).